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SHINDENGEN General Purpose Rectifiers SIL Bridges D4SB80 800V 4A FEATURES *oehin Single In-Line Package T *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION OUTLINE DIMENSIONS Case : 3S Case : 3S Unit : mm *oe power supply Switching *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Tc=108*Z 4 A 50Hz sine wave, R-load Without heatsink Ta=25*Z 2.3 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25*Z A 150 Current Squared Time I2 t 1ms*...t*10ms*@Tj=25*Z 110 A2s Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR * ecommended torque : 0.5Nm*j R i 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit VF I =2A, Pulse measurement, Rating of per diodeMax.0.95 V Forward Voltage F IR V=V , Pulse measurement, Rating of per diode Max.10 EA Reverse Current R RM AEjc junction to case *@* With heatsink @ Max.5.5 Thermal Resistance AEjl junction to lead *@ *@ Without heatsink Max.6 *Z/W AEja junction to ambient Without heatsink Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SB80 Forward Voltage 10 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] D4SB80 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] 12 10 8 6 4 2 0 SIN 0 1 2 3 4 5 6 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D4SB80 8 Derating Curve Heatsink Average Rectified Forward Current IO [A] Tc Tc 7 6 5 SIN 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] Sine wave R-load with heatsink D4SB80 4 Derating Curve Average Rectified Forward Current IO [A] 3.5 PCB 3 2.5 2 1.5 1 0.5 0 SIN Glass-epoxy substrate Soldering land 5mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D4SB80 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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